本文利用脉冲激光沉积法（PLD）制备了(La1-xPrx)0.7Sr0.3CoO3 (x=0, 0.2, 0.4, 0.6, 0.8)系列薄膜和La0.82Sr0.18Co1-xCrxO3 (x=0, 0.2, 0.4, 0.6, 0.8,1.0)系列薄膜，衬底为LaAlO3(100)单晶基片。通过X射线衍射（XRD）、原子力显微镜（AFM）、低温测试系统等手段测试了材料的晶体结构、表面形貌、输运特性等。本文的主要工作及结论如下： 1. 用固相反应法制备了(La1-xPrx)0.7Sr0.3CoO3(x=0, 0.2, 0.4, 0.6, 0.8)系列靶材以及La0.82Sr0.18Co1-xCrxO3 (x=0, 0.2, 0.4, 0.6, 0.8,1.0)系列靶材，用X射线衍射对靶材的晶体结构进行了表征，将XRD图谱与标准PDF卡对比非常吻合，没有出现明显杂相，说明制备的靶材的质量是良好的。 2. 用PLD法制备了(La1-xPrx)0.7Sr0.3CoO3 (x=0, 0.2, 0.4, 0.6, 0.8)系列薄膜，介绍了制备工艺。运用XRD、AFM对薄膜进行表征，测试了不同掺杂比例的薄膜材料在不同光照强度照射下的电阻-温度特性，以及不同光照强度照射下薄膜的光致电阻效应。 3. 用PLD法制备了La0.82Sr0.18Co1-xCrxO3(x=0, 0.2, 0.4, 0.6, 0.8,1.0)系列薄膜，介绍了制备工艺。运用XRD、AFM对薄膜的结构及表面形貌进行表征，测试了不同掺杂比例的薄膜材料在暗场条件下的电阻-温度特性，还测试了不同光照强度照射下薄膜的光致电阻效应。

In this paper, thin films of (La1-xPrx)0.7Sr0.3CoO3 (x=0, 0.2, 0.4, 0.6, 0.8) and La0.82Sr0.18Co1-xCrxO3(x=0, 0.2, 0.4, 0.6, 0.8, 1.0) have been deposited using pulsed laser deposition (PLD) method from targets prepared by the solid state reaction technology, the substrates are single crystal LaAlO3 (100). Thin films analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM), then we measured the temperature dependences on the resistance in all the films, and so on. The main works and conclusions are as follows: 1. We analyzed the structure of (La1-xPrx)0.7Sr0.3CoO3 (x=0, 0.2, 0.4, 0.6, 0.8) and La0.82Sr0.18Co1-xCrxO3 (x=0, 0.2, 0.4, 0.6, 0.8, 1.0) targets prepared by the solid state reaction technology with XRD. 2. (La1-xPrx)0.7Sr0.3CoO3 (x=0, 0.2, 0.4, 0.6, 0.8) thin films have been deposited using PLD method, and the preparation process is introduced. We analyzed the structure and the surface topography of thin films using XRD and AFM, respectively, then measured the temperature dependences on the resistance in all the films, and the photo-induced resistance effects of films, at different temperatures, irradiated by 532nm laser with different intensity. 3. La0.82Sr0.18Co1-xCrxO3 (x=0, 0.2, 0.4, 0.6, 0.8, 1.0) thin films have been deposited using PLD method, and the preparation process is introduced. We analyzed the structure and the surface topography of thin films using XRD and AFM, respectively, then measured the temperature dependences on the resistance in all the films, and the photo-induced resistance effects of all the films irradiated by 532nm laser with different intensity at different temperatures.