摘 要 多色响应薄膜在灾难监测、城市消防和安防领域有着重要的意义，本文在脉冲激光沉积(PLD)的方法下制备ZnMgO_BST双色响应薄膜，制备方法为先在STO基片上生长一层LSMO缓冲层之后，然后分别在缓冲层样品的一端的1/4处制备Zn1-xMgxO(x=0.1、0.3、0.5)薄膜，在缓冲层样品的另一端的1/4处制备BST薄膜。对于ZnMgO薄膜，采用X射线衍射(XRD)、原子力显微镜(AFM)、吸收光谱等测试手段对所制备的样品进行了特性表征，探讨了Mg的掺杂量对于样品结构、形貌和面间光电特性的影响，研究了ZnMgO薄膜伏安特性及激光能量对薄膜瞬态光响应特性的影响；对于BST薄膜主要针对其光电特性、铁电性、介电性以及热释电特性做系统的研究和测试。主要的工作及结果如下： （1）介绍了靶材的制备流程，对LSMO和BST两种不同的靶材采用不同的方法和工艺进行烧结。 （2）由ZnMgO薄膜的X射线衍射图谱表明，Mg含量不同的Zn1-xMgxO薄膜分别具有两种不同的晶格结构，当Mg掺杂量x≤0.3时，Zn1-xMgxO薄膜保持着纤锌矿结构，当x=0.5时，Zn1-xMgxO薄膜结构变为立方闪锌矿结构。随Mg掺杂量的增加，Zn1-xMgxO薄膜的主要衍射峰向大角度方向漂移。STO单晶基片的主峰（100）和（200）分别在23°和47°附近，生长的薄膜均在（100）方向择优取向生长；BST单晶基片的主峰（100）和（200）分别在22°和46°附近，有较好的结晶度也在（100）方向生长。 （3）采用吸收光谱拟合分析方法得到Zn1-xMgxO薄膜的禁带宽度。结果表明，Zn1-xMgxO薄膜（x=0.1、0.3、0.5）禁带宽度分别是3.4eV，4.2eV，5.6eV，可以看出Mg元素的掺杂量达到0.5时，ZnMgO样品已经达到了日盲波段的带隙。 （4）ZnMgO薄膜在加光以后电阻瞬间下降，然后持续下降，撤去光源之后，电阻会缓慢的上升，但是需要一定时间才能恢复到到初始值薄膜在90mJ的激光强度下光电效应较弱，在135mJ光照强度下光电效应较强，但是整体效应都较强，推测ZnMgO薄膜对光照影响明显。 （5）BST薄膜在加光以后电阻瞬间下降，然后缓慢上升，撤去光源之后，电阻会缓慢的降低到初始值；薄膜在90mJ的激光强度下光电效应较弱，在135mJ光照强度下光电效应较强，但是整体效应都较弱，因此BST薄膜对光照影响不明显。 （6）BST薄膜随着温度升高，界面电阻也随之升高；BST薄膜随着温度升高，界面电阻增长幅度逐渐变大；BST薄膜的界面电阻随着光照强度的增大越来越大，但整体变化趋势较小，导致此现象的原因可能是因为光照对BST薄膜影响较小。 （7）在高频（200Hz-500Hz）测试频率下，BST薄膜介电常数的大致趋势低温下缓慢增大，在介电常数大到极大值后随温度增大显著下降；薄膜样品介电损耗回出现先增长后降低的趋势，而且存在明显的损耗峰，而且随着频率的增大，薄膜样品的损耗峰在向低温方向移动，损耗峰的峰值也在减小。 （8）BST薄膜具有良好的铁电特性，并且受自发极化的影响，测得BST薄膜的热释电系数为1.35×10-9C·cm-2·K-1—1.83×10-8C·cm-2·K-1达到热释电红外探测器的参数范围。

ABSTRACT Multicolor response films are of great significance in the field of disaster monitoring, urban fire protection and security, this work made ZnMgO_BST films with double color response of preparation under the method of pulsed laser deposition (PLD). Firstly, a LSMO buffer layer was grown in STO substrate, then Zn1-xMgxO(x=0.1、0.3、0.5) thin film on was prepared on one end of the buffer layer samples, and at the other quarter of end of the buffer layer samples prepared BST thin films respectively. For ZnMgO films, the features of samples were prepared by using X-ray diffraction (XRD), atomic force microscope (AFM), absorption spectrum test means. This paper discusses how the doping amount of Mn influences the photoelectric characteristics of the structure, morphology and surface. In addition, the work studied volt-ampere characteristic of the ZnMg the feature O films and the effect of laser energy on transient response characteristics of thin films. As for the BST thin films, the work mainly aimed at studying the photoelectric, ferroelectric, dielectric and pyroelectric properties of the films. Meanwhile, the paper tested the system. The main work and results are as follows: (1) The preparation process of target material are introduced, including two different methods and technology of sintering the LSMO and BST as the target material. (2) The ZnMgO thin film X-ray diffraction pattern shows that the different Mg contents in Zn1-xMgxO film corresponded two different lattice structures respectively. when doped-Mg content X is less or equal to 0.3, Zn1-xMgxO film keeps wurtzite structure. when X is 0.5, Zn1-xMgxO film becomes into cubic structure of sphalerite. With the increase of the Mg doping amount, the main diffraction peak of Zn1-xMgxO film drift in the direction of large Angle. Main peaks of the STO single crystal substrate (100) and (200) are near the 23 ° and 47 ° respectively. The growth of thin films are in (100) preferred orientation. The main peaks of the BST single crystal substrate (100) and (200) are near the 22 ° and 46 ° respectively, which has good crystallinity and growth in the direction (100). (3) The Zn1-xMgxOthin film forbidden band width can be gotten by the absorption spectrum fitting analysis method. The results show that the Zn1-xMgxO film (x = 0.1, 0.3, 0.5) forbidden band width is 3.4 eV, 4.35 eV and 5.4 eV respectively. It can be seen When the Mg element doping amount reached 0.5, ZnMgO has reached the blind band of the band gap. (4) The resistance of ZnMgO films decreased sharply after adding light resistance, then continued declining, and after moving the light source, the resistance would rise slowly, but it needs to take some time to return to the initial value. The photoelectric effect of thin film under the laser energy of 90 mJ is weak ,while in high-energy 135 mJ light photoelectric effect is stronger. But the overall effect is strong, predicting ZnMgO films for illumination effect is obvious. (5) The resistance of the BST thin films decreased suddenly after adding light, and then slowly rose. The resistance will slowly decrease down to the initial value after moving the light. The photoelectric effect of thin film under the laser energy of 90 mJ is weak ,and in high-energy 135 mJ light the effect is stronger. But the overall effect is weak, speculating that the BST thin films effects unconspicuously on light. (6) The interface resistance of the BST thin films will increase with the temperature increases. With the temperature increases, the interface resistance increases progressively. Interface resistance of BST thin films is larger and larger with the increase of light energy, but the overall change trend is small, the reason of this phenomenon may be the influence of light on BST thin films. (7) BST thin film dielectric constant increases slowly in the condition of low temperature, while the dielectric constant falls sharply with the increase of temperature after reaching the maximum. Thin film dielectric loss appears the trend of increasing first and then decreasing, and exists loss peaks, and with the increase of frequency, the loss peak in the films shifted to low temperature and peak loss peak also decreases. (8) BST thin films has good ferroelectric properties, which was influenced by the spontaneous polarization, and this work has measured the pyroelectric coefficient of the BST thin films is 1.35×10-9C·cm-2·K-1—1.83×10-8C·cm-2·K-1 , which has reached the range of pyroelectric infrared detector parameters .