提高SiC磨料强度、韧性是研究热点之一。本文以廉价的硅质类、碳质类为原料，B₂O₃、B₄C为掺杂剂，通过热力学计算、炉内温度场模拟、工艺和配方研究，成功制备了B掺杂SiC粉体，其单颗粒抗压强度是普通SiC的2~3倍，韧性高于普通SiC磨料。开发的高强度高韧性SiC粉体制备新技术具有工艺简单、成本低廉等特点，有望指导工业实践。

论文研究结果如下：

热力学研究结果表明：当温度范围为1500℃～1760℃时，生成的中间产物SiO气体、CO和B反应生成B掺杂SiC粉体即Si₁₅BC₁₆。

炉内温度场模拟结果表明：采用真空多热源法模拟炉内温度场分布，确定了单质性条件、几何尺寸以及发热体形状为板状，发热体数目越多炉内温度场分布越均匀，采用多热源法可实现快速、均匀加热。

合成条件研究表明：采用真空多热源法具有工艺简单、成本低、纯度高等特点，优于无压烧结工艺；优选真空多热源法制备工艺，确定了最佳合成制度，最佳合成温度为1650℃，最佳合成时间为180 min，生成的B掺杂SiC粉体晶形完整，颗粒大小较为均匀，其D₅₀为17.2 μm。

配方研究表明：在最佳工艺基础上，确定SiO₂:C:B₂O₃=110:120:150为最佳配比，推测其理论化学式为Si₁₅BC₁₆，D₅₀为15.5 μm，颗粒大小均匀；在前者基础上将B₄C等质量代替B₂O₃，确定了最佳B₄C配比为SiO₂:C:B₄C=110:120:130，推测其化学式为Si₁₂BC₁₃，此时粒径D₅₀为15.2 μm。生成产物颗粒规整，轮廓分明，呈六方体形，其韧性随着B原子掺杂量的增加而提高，真密度随着掺B量的增加而减少，其真密度（2.575 g/cm³）低于未掺B的普通SiC真密度（3.113 g/cm³）。

Improving the strength and toughness of SiC abrasive is one of the hot research topics. In this paper, B-doped SiC powder from cheap silicon and carbon as raw materials, B₂O₃ and B₄C as dopants were successfully prepared through thermodynamic calculation, in-furnace temperature field simulation, process and formulation research. Its single-particle compressive strength is 2~3 times that of ordinary SiC, and its tenacity is higher than that of ordinary SiC abrasive. The new technology of high strength and high toughness SiC powder preparation has the characteristics of simple process and low cost, which is expected to guide industrial practice.

The research results of the paper are as follows:

The thermodynamic results show that when the temperature range is 1500℃~1760℃, The resulting intermediate SiO gas, CO and B react to generate a B-doped SiC powder, namely Si₁₅BC_16.

Furnace temperature field simulation results show that the vacuum infinite micro heat source method in the furnace temperature field distribution, determine the single quality conditions and geometric size of the furnace, determine the most suitable heating body shape for plate, the more heating body temperature field , with infinite micro heat source method can achieve fast and uniform heating.

The synthesis conditions shows that the preparation process using vacuum infinite microheat source method has the characteristics of simple process, low cost and high purity than the pressure-free sintering process. The vacuum infinite microheat source method is preferred, and the optimal synthesis system is determined. The optimal synthesis temperature is 1650℃, and the optimal synthesis time is 180 min. The B-doped SiC powder crystal is complete, the particle size is relatively uniform, and the D₅₀ is 17.2 μm.

Formula study shows that based on the optimal process, the optimal ratio is SiO₂:C:B₂O₃=110:120:150, it is estimated that the theoretical chemical formula is Si₁₅BC_16, D₅₀ is 15.5 m, and the particle size is uniform. On the former B₄C mass replace B₂O₃, the optimal B₄C ratio is SiO₂:C:B₄C=110:120:130, the chemical formula is Si₁₂BC₁₃, and the particle size D₅₀ is 15.2 m. The B-doped SiC powder particles are regular, distinct and hexagonal in shape. Its toughness increases with the increase of doping of B atoms, the true density decreases with the increase of B doping, and the true density is 2.575 g/cm³ lower than the ordinary SiC without B doping (3.113 g/cm³).

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