近年来，随着半导体技术的不断发展，硅基功率器件的性能已经达到极限，以SiCMOSFET为代表的新型宽禁带半导体功率器件具有工作频率高，耐高压和耐高温等优势，在轨道交通、航空航天、感应加热、新能源汽车等各个领域发挥重要作用。单个SiCMOSFET电流容量不大，为了满足大功率电力电子设备的需求，需要将SiCMOSFET并联以提高系统通流能力。但是由于器件自身、寄生电感、栅极驱动等参数的影响，会导致各并联支路电流分配产生差异，严重时破坏系统稳定性。因此，讨论碳化硅MOSFET的并联均流技术具有重要研究意义。

首先，本文对SiC MOSFET的静态特性、开关特性、功率特性和均流特性进行详细分析，并对SiC MOSFET的主要参数进行说明。介绍了功率器件的选型，计算了驱动参数，设计了基于1ED020I12-F2驱动芯片的驱动电路。

其次，基于Multisim软件搭建SiC MOSFET并联测试回路，对可能导致电流不平衡问题的外部参数，包括线路的寄生电感、栅极驱动以及温度的差异等，进行分析和仿真，得到不同参数变化对电流不平衡程度的影响结果，证明采取电流均流措施的必要性。

最后，为解决导致流过各并联支路电流不平衡问题，对抑制不平衡电流的方案进行深入研究和分析。针对双管并联提出了一种栅极串联均流电阻联合耦合电感的不平衡电流抑制方法，对该方法的工作原理进行了详细分析，并通过仿真软件验证了该方法的有效性。针对多管并联提出了一种栅极串联均流电阻联合源极增加功率电感的不平衡电流抑制方法，对该方法工作原理进行了分析说明，并通过仿真软件验证了该方法的有效性。通过搭建实验测试平台进行均流实验和不平衡电流测试，验证了两种不平衡电流抑制方法的正确性和可行性。

In recent years, with the continuous development of semiconductor technology, the performance of silicon-based power devices has reached the limit. The new wide band gap semiconductor power devices represented by SiC MOSFET have the advantages of high working frequency, high pressure and high temperature resistance, and play an important role in rail transit, aerospace, induction heating, new energy vehicles and other fields. The current capacity of a single SiC MOSFET is small, in order to meet the needs of high-power electronic equipment, it is necessary to connect the SiC MOSFET in parallel to improve the current capacity of the system. However, due to the influence of the device itself, parasitic inductor, gate drive and other factors, it will lead to differences in current distribution among the parallel branches, and seriously destroy the stability of the system. Therefore, it is of great significance to discuss the parallel current sharing technology of Silicon Carbide MOSFET.

First of all, the static characteristics, switching characteristics, power characteristics and current sharing characteristics of SiC MOSFET are analyzed in detail, and explains the main parameters of the SiC MOSFET. The selection of power devices is introduced, the driving parameters are calculated, and the driving circuit based on 1ED020I12-F2 driver chip is designed.

Secondly, the SiC MOSFET parallel test circuit is built based on Multisim software, and the external parameters that may lead to current imbalance, including parasitic inductance, gate drive and temperature difference, are analyzed and simulated, and the results of the influence of different parameters on the degree of current imbalance are obtained, which proves the necessity of current sharing.

Finally, in order to solve the problem of unbalanced current flowing through each parallel branch, the scheme to restrain the unbalanced current is deeply studied and analyzed. Aiming at the parallel connection of two transistors, an unbalanced current suppression method of gate series current sharing resistor combined with coupled inductor is proposed, the working principle of this method is analyzed in detail, and the effectiveness of the method is verified by simulation software. Aiming at the parallel connection of multiple transistors, an unbalanced current suppression method of grid series current sharing resistance combined with source to increase power inductance is proposed, the working principle of this method is analyzed and explained, and the effectiveness of the method is verified by simulation software. By setting up an experimental test platform for current sharing experiment and unbalanced current test, the correctness and feasibility of the two unbalanced current suppression methods are verified.

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