论文中文题名: | 多热源合成SiC传热传质规律的数值模拟及实验研究 |
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学号: | T01032 |
保密级别: | 公开 |
学科代码: | 081902 |
学科名称: | 矿物加工工程 |
学生类型: | 硕士 |
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论文外文题名: | Numerical Simulation and Experimental Study of Heat and Quality Transferring Law in Multi-heat Source Synthesis Silicon Carbide |
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论文中文摘要: |
研究多热源合成SiC冶炼炉炉内温度分布规律以及热量、质量的动态传递规律,对于提高SiC的产量和质量,降低产品能耗以及安全生产具有重要的理论价值与实际意义。
本论文通过对冶炼炉的传热学分析,得出SiC冶炼炉温度场属于平面有内热源变物性非稳态导热,以三热源合成炉为例建立了多热源合成炉温度场的数学模型。对多热源冶炼炉温度场的数值计算方法进行了分析,建立了优化的有限元模型,确定了相关的热物性参数,利用ANSYS软件对冶炼炉温度场进行了数值模拟。
通过数值模拟,结合物理实验以及工业试验验证,系统地研究了多热源SiC冶炼炉内的温度分布、热流强度以及温度梯度的变化规律以及供电参数对冶炼炉温度场的影响,揭示了多热源合成炉的温度分布与热能叠加规律以及动态的传热传质规律。结果表明随供电时间的延长,高温等温面逐渐向外扩展,适合生成SiC的温区面积逐渐增大,结晶筒不断向外扩展,产品品位大副提高,但是过长的供电时间以及过大的供电功率不但增加能耗,而且会导致SiC产品产率降低,应控制合理的供电时间及供电功率,使SiC适量分解,可以合成大量的高致密SiC产品;随热源数目的增加, 原来不能合成SiC区域,由于利用了单个热源的“余热”,使传统单热源合成炉外围低温区域散失掉的部分热能,通过多热源间的热能叠加和热源屏蔽而得以利用,使高温区域热能扩散和物质扩散动力更强,高温区分布更宽,从而形成了SiC,尤其是合成了大量的高品位SiC;多热源合成炉随热源数目的增加,热源结合部的温度梯度降低,温度场均匀性更好,多热源炉内无高温聚集区,生产更平稳,更安全。
在建立温度分布、温场叠加规律以及传热传质规律的基础上,提出了最佳发热源数目判定模型,并通过算例,说明了该判定方法为能够科学的确定最佳的炉体参数提供了理论指导。
总体上,本文建立了多热源合成SiC的温度分布与温场叠加规律及动态传热传质规律的理论体系,建立了最佳发热源数目判定方法,获得了多热源合成SiC优化有益传热和传质的途径,为提高SiC产品的产量和质量,降低产品能耗和安全生产提供理论指导。
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论文外文摘要: |
The research of temperature distributing law in the multi-heat-source synthetic SiC furnace and the dynamic transferring law of heat and quality has important academic value and practical meaning to improve the output and quality of SiC, reduce the energy cost of product and produce safely.
The paper via the heat transfer analysis of the furnace, elicits the temperature field of SiC furnace is belong to the heat transfer in the plain, having inner heat source, alterable material nature and non-steady state. The mathematic models of temperature fields in the furnace are set up partly with single heat source, parallel three heat sources and solid three heat sources. The numerical calculating method of temperature field with multi-heat-source is analyzed. Meanwhile, the optimizing FEM model is established, the related heat material quality parameter is confirmed. To the non-linear problem, the Newton-Raphson solution method is used, and the temperature field in the furnace is modeled numerically with ANSYS software.
Through numerical simulation and with the verification of the physical test and the industrial test, the changing law of the temperature distribution, the heat strength, and temperature grads in the synthetic SiC furnace, the effect of the power supply parameter to the temperature field in the furnace are studied by the numbers. The temperature distribution and temperature fold law in the multi-heat-source furnace and the dynamic heat and character passing law are disclosed. The result indicates the high temperature isothermal face expends outside gradually with the prolong of the power supply time, so the temperature field area compatible to the production of SiC increase gradually, the crystal canister spreads outside gradually, so the quality of product increase on a large scale. But it not only increases the energy cost, but also results in the reduction of producing efficiency of SiC because the too long power supply time and the too big electric power. So it needs to control the reasonable power supply time and electric power, make the SiC decompose in a proper quantity. Then it can compose abundant high close-grained SiC product. With the addition of the number of heat source, the region can form a mass of high quality SiC. Because it uses the residual heat of one single heat source, i.e. it uses the lost part heat energy in the low temperature region in the periphery of the traditional single heat source furnace, makes the diffuse power of the heat energy diffuseness and material diffuseness still strong in the high temperature region and makes the distribution of high temperature region furthermore wide. To the multi-heat-source synthetic SiC furnace, the temperature grads decrease in the united part of heat source with the addition of the number of heat source, so the evenness of temperature field is better and there is no high temperature congregate region, the production is more placidity and more safety.
On the basis of the establishment of the law of temperature distribution and temperature field fold and the law of dynamic heat and quality transmitting, the model to determine the number of the optimal heat source is put forward. It supplies the theoretical guide of this judging method to confirm scientifically the optimal parameter of the furnace through the concrete calculating model.
In general, this paper sets up the theoretical system of the law of the temperature distribution, temperature field fold and the law of the dynamic heat and quality transmitting. It builds the judging method of the optimal heat source number. The optimizing and available way of heat and quality transmitting is obtained of the furnace to compose SiC. So the theoretical guide is supplied to improve the quantity and quality of SiC product, decrease the energy cost and produce safely.
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中图分类号: | TB321 |
开放日期: | 2004-05-14 |